BC550 NPN Transistor (50V, 0.1A)

Features
Switching and Amplifier functionality
High‑Voltage capability (VCEO up to 45 V)
Low‑Noise performance (noise figure down to 1.4 dB)
Complementary to BC556, BC557, BC558, BC559, and BC560 series
Pb‑Free Device, RoHS‑compliant

Specifications
Absolute Maximum Ratings (TJ = 25 °C)

Parameter Symbol Value Unit
Collector–Base Voltage VCBO 50 V
Collector–Emitter Voltage VCEO 45 V
Emitter–Base Voltage VEBO 5 V
Collector Current (DC) IC 100 mA
Collector Power Dissipation PC 500 mW
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG –65 to +150 °C
Electrical Characteristics (TC = 25 °C)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut‑off Current ICBO VCB = 30 V, IE = 0 — — 15 nA
DC Current Gain hFE VCE = 5 V, IC = 2 mA 110 — 800 —
VCE(sat) (low‑current) — IC = 10 mA, IB = 0.5 mA — 90 250 mV
VCE(sat) (high‑current) — IC = 100 mA, IB = 5 mA — 250 600 mV
VBE(on) — VCE = 5 V, IC = 2 mA 580 660 700 mV
VBE(on) (at 10 mA) — VCE = 5 V, IC = 10 mA — 720 — mV
VBE(sat) — IC = 10 mA, IB = 0.5 mA — 700 — mV
VBE(sat) (high‑current) — IC = 100 mA, IB = 5 mA — 900 — mV
Current Gain Bandwidth fT VCE = 5 V, IC = 10 mA, f = 100 MHz — 300 — MHz
Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz — 3.5 6.0 pF
Input Capacitance Cib VEB = 0.5 V, IC = 0, f = 1 MHz — 9 — pF
Noise Figure (BC550) N.F. VCE = 5 V, IC = 200 µA, f = 1 kHz, RG = 2 kΩ 1.4 — 3.0 dB